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First introduced nearly a decade ago, the first edition of the Handbook of Semiconductor Interconnection Technology became widely popular for its thorough, integrated treatment of interconnect technologies and its forward-looking perspective. The field has grown tremendously in the interim and many of the "likely directions" outlined in the first edition are now standard in modern facilities. Thoroughly updated to reflect recent advances, this Second Edition examines the interconnect and fabrication technologies currently available along with the future prospects for the field.

What's New in the Second Edition?

· Detailed discussion of electrochemical equipment for plating copper

· Updated information on tools used for evaporation, chemical vapor deposition, and plasma processes

· Emphasis on measurement of mechanical and thermal properties of insulators

· Recently reported methods for characterizing porous dielectric thin films

· Greater focus on integration issues and properties of titanium, cobalt, and nickel silicides

· New process schemes based on the increased need for borderless contact gates and source/drain

· Expanded discussion on recently reported choices for low-dielectric insulators

· More emphasis on electroplated copper, especially morphology of plated films and their properties

· Recent developments in thin film liners and barriers

· Expanded material on copper reliability

The Handbook of Semiconductor Interconnection Technology, Second Edition offers comprehensive coverage of the practical aspects of interconnections for manufacturing.

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